Perancangan Broadband RF Power Amplifier 2,3 GHz pada 4G LTE Time Division Duplex

Syifaul Fuada

Abstract


This paper reports a design of Broadband RF Power Amplifier TDD 4G LTE operating at frequency 2,3 GHz – 2,36 GHz, according to the working frequency of the service provider Smartfren’s BTS. This RF Power Amplifier uses class A amplifier with GaN HEMT transistor type CREE CGH40120F. This design is simulated using Advanced Power Design program (ADS) version 2014. The simulation results show that the Power Amplifier is stable (K> 1) at a frequency of 2.3 GHz with the S11 and S22 match, generating 43.44 dBm output power 22,08 Watt with a gain of 10.5 dB, return loss of <-5 dB, and maximum power supply efficiency of 39.8%

Makalah ini menjelaskan tentang desain Broadband RF Power Amplifier 4G LTE yang beroperasi pada frekuensi 2,3 GHz, sesuai dengan frekuensi kerja operator selular Smartfren untuk BTS. RF Power Amplifier yang digunakan adalah penguat kelas A dengan transistor jenis GaN HEMT tipe CREE CGH40120F. Rancangan ini disimulasikan menggunakan program Power Advanced Design (ADS) versi 2014. Hasil simulasi menunjukkan bahwa Power Amplifier dalam keadaan stabil (K>1) pada frekuensi 2,3 GHz dengan S11 dan S22 match, menghasilkan output power 43,44 dBm 22,08 watt dengan penguatan 20,5 dB, return of loss <-5 dB, dan efisiensi power supply maksimum sebesar 39.8%.


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References


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DOI: http://dx.doi.org/10.22146/jnteti.v4i3.161

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